Optimized Activation of Solution-Processed Amorphous Oxide Semiconductors for Flexible Transparent Conductive Electrodes-Reference-Cited by-同舟云学术

Optimized Activation of Solution-Processed Amorphous Oxide Semiconductors for Flexible Transparent Conductive Electrodes

Published:2017-12-21 Issue:1 Volume:4 Page:1700386
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Choi Byung Doo¹,Park Joohyung¹,Baeg Kang-Jun²,Kang Minji³,Heo Jae Sang⁴,Kim Seonhyoung¹,Won Jongkook¹,Yu Seungwoo¹,Ahn Kyunghan¹,Lee Tae Hoon⁵,Hong Jongin¹,Kim Dong-Yu³,Usta Hakan⁶,Kim Choongik⁷,Park Sung Kyu⁴,Kim Myung-Gil¹

Affiliation:

1. Department of Chemistry; Chung-Ang University; Seoul 06974 Republic of Korea

2. Department of Graphic Arts Information Engineering; Pukyong National University; Busan 48547 Republic of Korea

3. Research Institute for Solar and Sustainable energies (RISE); School of Materials Science and Engineering; Gwangju Institute of Science and Technology (GIST); Gwangju 61005 Republic of Korea

4. School of Electrical and Electronics Engineering; Chung-Ang University; Seoul 06974 Republic of Korea

5. Department of Electrical Engineering; Kwangwoon University; Seoul 01897 Republic of Korea

6. Department of Materials Science and Nanotechnology Engineering; Abdullah Gül University; Kayseri 38080 Turkey

7. Department of Chemical and Biomolecular Engineering; Sogang University; Seoul 04107 Republic of Korea

Funder

National Research Foundation of Korea

Korea Evaluation Institute of Industrial Technology

Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201700386/fullpdf

Reference76 articles.

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4. Low resistivity indium–tin oxide transparent conductive films. II. Effect of sputtering voltage on electrical property of films

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