Releasable High‐Performance GaAs Schottky Diodes for Gigahertz Operation of Flexible Bridge Rectifier-Reference-Cited by-同舟云学术

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Releasable High‐Performance GaAs Schottky Diodes for Gigahertz Operation of Flexible Bridge Rectifier

Published:2018-12-19 Issue:2 Volume:5 Page:1800772
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Jung Yei Hwan¹²,Zhang Huilong²,Lee In‐Kyu²,Shin Joo Hwan¹,Kim Tae‐il¹,Ma Zhenqiang²^ORCID

Affiliation:

1. School of Chemical Engineering Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea

2. Department of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USA

Funder

Air Force Office of Scientific Research

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800772

Reference36 articles.

1. Stretchable and Foldable Silicon Integrated Circuits

2. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies

3. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

4. CMOS-Technology-Enabled Flexible and Stretchable Electronics for Internet of Everything Applications

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4. TCAD Investigation of Step-Oxide and Asymmetric Doping Design with Electrode Engineering on Lateral β-Ga₂O₃ MOSFET for Terahertz Applications;2023 IEEE Latin American Electron Devices Conference (LAEDC);2023-07-03

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