A Redox-Based Resistive Switching Memory Device Consisting of Organic-Inorganic Hybrid Perovskite/Polymer Composite Thin Film
Author:
Affiliation:
1. Department of Chemical Engineering; National Taiwan University; Taipei 10617 Taiwan
2. Institute of Polymer Science and Engineering; National Taiwan University; Taipei 10617 Taiwan
Funder
Ministry of Science and Technology, Taiwan
National Taiwan University
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
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