High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study-Reference-Cited by-同舟云学术

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High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study

Published:2017-01-11 Issue:2 Volume:3 Page:1600399
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Kuc Agnieszka¹²,Cusati Teresa³,Dib Elias³,Oliveira Augusto F.¹²,Fortunelli Alessandro⁴,Iannaccone Giuseppe³,Heine Thomas¹²,Fiori Gianluca³

Affiliation:

1. Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie; University of Leipzig; Linnéstr. 2 04103 Leipzig Germany

2. Department of Physics and Earth Science; Jacobs University Bremen; Campus Ring 1 28759 Bremen Germany

3. Dipartimento di Ingegneria dell'Informazione; Università di Pisa; Via Caruso 16 56122 Pisa Italy

4. CNR-ICCOM; Istituto di Chimica dei CompostiOrganometallici; Via G. Moruzzi 1 56124 Pisa Italy

Funder

Deutsche Forschungsgemeinschaft

Seventh Framework Programme

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Single-layer MoS2 transistors

3. Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure

4. The rise of graphene

5. Two-dimensional gas of massless Dirac fermions in graphene

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