Structural Phase Transition and Carrier Density Tuning in SnSe x Te1- x Nanoplates-Reference-Cited by-同舟云学术

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Structural Phase Transition and Carrier Density Tuning in SnSe x Te1- x Nanoplates

Published:2016-07-13 Issue:9 Volume:2 Page:1600144
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Shen Jie¹²³,Woods John M.¹²³,Xie Yujun¹²³,Morales-Acosta Mayra D.³⁴,Cha Judy J.¹²³

Affiliation:

1. Department of Mechanical Engineering and Materials Science; Yale University; 15 Prospect St. New Haven CT 06511 USA

2. Energy Sciences Institute; Yale West Campus; 810 West Campus Drive West Haven CT 06516 USA

3. Center for Research on Interface Structures and Phenomena; 15 Prospect New Haven CT 06511 USA

4. School of Applied Physics; Yale University; 15 Prospect St. New Haven CT 06511 USA

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201600144/fullpdf

Reference59 articles.

1. Colloquium: Topological insulators

2. Topological insulators and superconductors

3. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

4. Bulk Fermi surface coexistence with Dirac surface state inBi2Se3: A comparison of photoemission and Shubnikov–de Haas measurements

5. Conduction band splitting and transport properties of Bi2Se3

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2. Bulk Rashba Spin Splitting and Dirac Surface State in p ‐Type (Bi 0.9 Sb 0.1 ) 2 Se 3 Single Crystal;physica status solidi (RRL) – Rapid Research Letters;2022-01-05

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4. Recent development and advances in Photodetectors based on two-dimensional topological insulators;Journal of Materials Chemistry C;2020

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