Dimensional Crossover Transport Induced by Substitutional Atomic Doping in SnSe2-Reference-Cited by-同舟云学术

Dimensional Crossover Transport Induced by Substitutional Atomic Doping in SnSe2

Published:2018-03-13 Issue:4 Volume:4 Page:1700563
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Lee Suyoun¹²,Lee Young Tack³,Park Seong Gon⁴,Lee Kyu Hyoung⁵,Kim Sung Wng⁶,Hwang Do Kyung²⁷,Lee Kimoon⁴^ORCID

Affiliation:

1. Center for Electronic Materials; Post-Silicon Semiconductor Institute; Korea Institute of Science and Technology (KIST); Seoul 02792 Republic of Korea

2. Division of Nano & Information Technology, KIST School; Korea University of Science and Technology (KUST); Seoul 02792 Republic of Korea

3. Department of Electronic Engineering; Inha University; Incheon 22201 Republic of Korea

4. Department of Physics; Kunsan National University; Gunsan 54150 Republic of Korea

5. Department of Nano Applied Engineering; Kangwon National University; Chuncheon 24341 Republic of Korea

6. Department of Energy Science; Sungkyunkwan University; Suwon 16419 Republic of Korea

7. Center of Opto-Electronic Materials and Devices; Post-Silicon Semiconductor Institute; Korea Institute of Science and Technology (KIST); Seoul 02792 Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Korea Institute of Science and Technology

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference33 articles.

1. The electronic properties of graphene

2. MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

3. Van der Waals heterostructures