Electronic Properties of Copper(I) Thiocyanate (CuSCN)-Reference-Cited by-同舟云学术

Electronic Properties of Copper(I) Thiocyanate (CuSCN)

Published:2017-02-10 Issue:3 Volume:3 Page:1600378
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Pattanasattayavong Pichaya¹,Promarak Vinich¹,Anthopoulos Thomas D.²

Affiliation:

1. Department of Materials Science and Engineering; School of Molecular Science and Engineering; Vidyasirimedhi Institute of Science and Technology (VISTEC); Rayong 21210 Thailand

2. Department of Physics and Centre for Plastic Electronics; Blackett Laboratory; Imperial College London; London SW7 2AZ United Kingdom

Funder

Thailand Research Fund

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference67 articles.

1. Hole-Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature

2. High‐Efficiency, Solution‐Processed, Multilayer Phosphorescent Organic Light‐Emitting Diodes with a Copper Thiocyanate Hole‐Injection/Hole‐Transport Layer

3. High-Efficiency Organic Photovoltaic Cells Based on the Solution-Processable Hole Transporting Interlayer Copper Thiocyanate (CuSCN) as a Replacement for PEDOT:PSS

4. Copper thiocyanate: An attractive hole transport/extraction layer for use in organic photovoltaic cells

5. Sb2S3-Sensitized Nanoporous TiO2 Solar Cells

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