Graphene Transistors Gated by Salted Proton Conductor-Reference-Cited by-同舟云学术

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Graphene Transistors Gated by Salted Proton Conductor

Published:2016-07-04 Issue:8 Volume:2 Page:1600122
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Kim Hyunwoo¹,Kim Beom Joon²,Sun Qijun³,Kang Moon Sung⁴,Cho Jeong Ho¹⁵

Affiliation:

1. SKKU Advanced Institute of Nanotechnology (SAINT); Sungkyunkwan University; Suwon 440-746 South Korea

2. Department of Biomedical Engineering; Tufts University; Medford MA 02155 USA

3. Beijing Institute of Nanoenergy and Nanosystems; Chinese Academy of Sciences; Beijing 100083 P. R. China

4. Department of Chemical Engineering; Soongsil University; Seoul 156-743 South Korea

5. School of Chemical Engineering; Sungkyunkwan University; Suwon 440-746 South Korea

Funder

National Research Foundation of Korea

Ministry of Education

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference56 articles.

1. Ionic-liquid materials for the electrochemical challenges of the future

2. Experimental observation of the quantum Hall effect and Berry's phase in graphene

3. Printable ion-gel gate dielectrics for low-voltage polymer thin-film transistors on plastic

4. Electronic functionalization of solid-to-liquid interfaces between organic semiconductors and ionic liquids: Realization of very high performance organic single-crystal transistors

5. Insulator Polarization Mechanisms in Polyelectrolyte-Gated Organic Field-Effect Transistors

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