Material Design of Transparent Oxide Semiconductors for Organic Electronics: Why Do Zinc Silicate Thin Films Have Exceptional Properties?-Reference-Cited by-同舟云学术

Material Design of Transparent Oxide Semiconductors for Organic Electronics: Why Do Zinc Silicate Thin Films Have Exceptional Properties?

Published:2017-12-29 Issue:2 Volume:4 Page:1700352
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Nakamura Nobuhiro¹²³,Kim Junghwan²⁴,Hosono Hideo¹²⁴

Affiliation:

1. Laboratory for Materials and Structures Institute of Innovative Research Tokyo Institute of Technology 4259 Nagatsuta Midori‐ku Yokohama 226‐8503 Japan

2. ACCEL Program Japan Science and Technology Agency Kawaguchi 332‐0012 Japan

3. New Product R&D Center Asahi Glass Co. Ltd. 1150, Hazawa Kanagawa‐ku Yokohama 221‐8755 Japan

4. Materials Research Center for Element Strategy Tokyo Institute of Technology Mailbox SE‐1, 4259 Nagatsuta Midori‐ku Yokohama 226‐8503 Japan

Funder

Japan Science and Technology Agency

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201700352

Reference28 articles.

1. Thin-Film Organic Electronic Devices

2. The influence of annihilation processes on the threshold current density of organic laser diodes

3. Bulk Heterojunction Solar Cells with Large Open-Circuit Voltage: Electron Transfer with Small Donor-Acceptor Energy Offset

4. Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays

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