Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization-Reference-Cited by-同舟云学术

Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization

Published:2018-07-16 Issue:9 Volume:4 Page:1700592
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Gritsenko Vladimir A.¹²³,Novikov Yuriy N.¹,Perevalov Timofey V.¹²³,Kruchinin Vladimir N.¹,Aliev Vladimir S.¹,Gerasimova Alina K.¹,Erenburg Simon B.⁴⁵,Trubina Svetlana V.⁴,Kvashnina Kristina O.⁶⁷,Prosvirin Igor P.⁸^ORCID,Lanza Mario⁹

Affiliation:

1. Rzhanov Institute of Semiconductor Physics; SB RAS, 13 Acad. Lavrent'ev Ave. 630090 Novosibirsk Russia

2. Novosibirsk State University; 2 Pirogov Str. 630090 Novosibirsk Russia

3. Novosibirsk State Technical University; 20 K. Marx Ave. 630073 Novosibirsk Russia

4. Nikolaev Institute of Inorganic Chemistry SB RAS; 3 Acad. Lavrent'ev Ave. 630090 Novosibirsk Russia

5. Budker Institute of Nuclear Physics SB RAS; 11 Acad. Lavrent'ev Ave. 630090 Novosibirsk Russia

6. The European Synchrotron Research Facility; CS40220 38043 Grenoble Cedex 9 France

7. Institute of Resource Ecology; Helmholtz-Zentrum Dresden-Rossendorf; P.O. Box 510119 01314 Dresden Germany

8. Boreskov Institute of Catalysis SB RAS; 5 Acad. Lavrent'ev Ave. 630090 Novosibirsk Russia

9. Institute of Functional Nano & Soft Materials (FUNSOM); Collaborative Innovation Center of Suzhou Nanoscience and Technology; Soochow University; 199 Ren-Ai Road Suzhou 215123 China

Funder

Russian Foundation for Basic Research

Russian Science Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201700592/fullpdf

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