Suppressed Defects by Functional Thermally Cross‐Linked Fullerene for High‐Efficiency Tin‐Lead Perovskite Solar Cells

Author:

Zhao Jinbo1ORCID,Su Zhenhuang2,Pascual Jorge3,Wu Hongzhuo1,Wang Haibin4,Aldamasy Mahmoud H.5,Zhou Zhengji1,Wang Chenyue2,Li Guixiang5,Li Zhe6ORCID,Gao Xingyu2,Hsu Chain‐Shu7,Li Meng1ORCID

Affiliation:

1. Key Lab for Special Functional Materials of Ministry of Education National & Local Joint Engineering Research Center for High‐Efficiency Display and Lighting Technology School of Nanoscience and Materials Engineering and Collaborative Innovation Center of Nano Functional Materials and Applications Henan University Kaifeng 475004 P. R. China

2. Shanghai Synchrotron Radiation Facility (SSRF) Shanghai Advanced Research Institute Chinese Academy of Sciences 239 Zhangheng Road Shanghai 201204 P. R. China

3. POLYMAT University of the Basque Country UPV/EHU Donostia‐San Sebastián 20018 Spain

4. Institute of Advanced Ceramics, Henan Academy of Sciences Zhengzhou 450046 China

5. Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH Hahn‐Meitner‐Platz 1 14109 Berlin Germany

6. School of Engineering and Materials Science (SEMS) Queen Mary University of London London E1 4NS UK

7. Department of Applied Chemistry and Center for Emergent Functional Matter Science National Yang Ming Chiao Tung University Hsinchu 300093 Taiwan

Abstract

AbstractMixed tin‐lead (Sn‐Pb) perovskites have attracted the attention of the community due to their narrow bandgap, ideal for photovoltaic applications, especially tandem solar cells. However, the oxidation and rapid crystallization of Sn2+ and the interfacial traps hinder their development. Here, cross‐linkable [6,6]‐phenyl‐C61‐butyric styryl dendron ester (C‐PCBSD) is introduced during the quenching step of perovskite thin film processing to suppress the generation of surface defects at the electron transport layer interface and improve the bulk crystallinity. The C‐PCBSD has strong coordination ability with Sn2+ and Pb2+ perovskite precursors, which retards the crystallization process, suppresses the oxidation of Sn2+, and improves the perovskite bulk and surface crystallinity, yielding films with reduced nonradiative recombination and enhanced interface charge extraction. Besides, the C‐PCBSD network deposited on the perovskite surface displays superior hydrophobicity and oxygen resistance. Consequently, the devices with C‐PCBSD obtain PCEs of up to 23.4% and retained 97% of initial efficiency after 2000 h of storage in a N2 atmosphere.

Funder

AXA Research Fund

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Publisher

Wiley

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