Electrode‐Induced Self‐Healed Monolayer MoS 2 for High Performance Transistors and Phototransistors-Reference-Cited by-同舟云学术

Electrode‐Induced Self‐Healed Monolayer MoS 2 for High Performance Transistors and Phototransistors

Published:2021-09-04 Issue:41 Volume:33 Page:2102091
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Pak Sangyeon¹,Jang Seunghun²,Kim Taehun¹,Lim Jungmoon¹,Hwang Jae Seok³,Cho Yuljae⁴,Chang Hyunju²,Jang A‐Rang⁵,Park Kyung‐Ho³,Hong John⁶,Cha SeungNam¹^ORCID

Affiliation:

1. Department of Physics Sungkyunkwan University (SKKU) Suwon Gyeonggi‐do 16419 Republic of Korea

2. Chemical Data‐Driven Research Center Korea Research Institute of Chemical Technology (KRICT) Gajeong‐ro 141 Daejeon 34114 Republic of Korea

3. Nanodevices Laboratory Korea Advanced Nano Fab Center (KANC) Suwon 16229 Republic of Korea

4. University of Michigan ‐ Shanghai Jiao Tong University Joint Institute Shanghai Jiao Tong University Minhang District Shanghai 200240 P. R. China

5. Department of Electrical Engineering Semyung University Chungcheongbuk‐do 27136 Republic of Korea

6. School of Materials Science and Engineering Kookmin University Seoul 02707 Republic of Korea

Funder

Korea Research Institute of Chemical Technology

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202102091

Reference50 articles.

1. Monolayer optical memory cells based on artificial trap-mediated charge storage and release

2. Strain-Mediated Interlayer Coupling Effects on the Excitonic Behaviors in an Epitaxially Grown MoS2/WS2 van der Waals Heterobilayer

3. Surface functionalization-induced photoresponse characteristics of monolayer MoS2 for fast flexible photodetectors

4. High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

5. How Good Can Monolayer MoS2 Transistors Be?

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