Magnetic Skyrmion Transistor Gated with Voltage‐Controlled Magnetic Anisotropy-Reference-Cited by-同舟云学术

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Magnetic Skyrmion Transistor Gated with Voltage‐Controlled Magnetic Anisotropy

Published:2022-12-29 Issue:9 Volume:35 Page:2208881
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Yang Seungmo¹,Son Jong Wan¹,Ju Tae‐Seong¹²,Tran Duc Minh³,Han Hee‐Sung⁴,Park Sungkyun²,Park Bae Ho³,Moon Kyoung‐Woong¹,Hwang Chanyong¹^ORCID

Affiliation:

1. Quantum Spin Team Korea Research Institute of Standards and Science Daejeon 34113 Republic of Korea

2. Department of Physics Pusan National University Busan 46241 Republic of Korea

3. Division of Quantum Phases and Devices Department of Physics Konkuk University Seoul 05029 Republic of Korea

4. Department of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202208881

Reference47 articles.

1. Skyrmion Lattice in a Chiral Magnet

2. Real-space observation of a two-dimensional skyrmion crystal

3. Topological properties and dynamics of magnetic skyrmions

4. The 2020 skyrmionics roadmap

5. Observation of room-temperature magnetic skyrmions and their current-driven dynamics in ultrathin metallic ferromagnets

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1. Skyrmions Subtractor Based on Dzyaloshinskii–Moriya Interaction Gate;The Journal of Physical Chemistry Letters;2024-07-24

2. Acceleration and Deceleration Behavior of Skyrmion Controlled by Curvature Gradient in Elliptical‐Ring Track;Advanced Electronic Materials;2024-07-18

3. Skyrmion-Based Transistor Utilizing Dzyaloshinskii-Moriya Interaction Barrier;2024 IEEE 24th International Conference on Nanotechnology (NANO);2024-07-08

4. Shape-influenced non-reciprocal transport of magnetic skyrmions in nanoscale channel;Chinese Physics B;2024-07-01

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