Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design-Reference-Cited by-同舟云学术

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Published:2021-09-09 Issue:43 Volume:33 Page:2104564
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Liang Jianbo¹^ORCID,Kobayashi Ayaka¹,Shimizu Yasuo²^ORCID,Ohno Yutaka³^ORCID,Kim Seong‐Woo⁴,Koyama Koji⁴,Kasu Makoto⁵^ORCID,Nagai Yasuyoshi²^ORCID,Shigekawa Naoteru¹^ORCID

Affiliation:

1. Department of Electronic Information Systems Osaka City University 3‐3‐138 Sugimoto Sumiyoshi‐Ku Osaka 558‐8585 Japan

2. Institute for Materials Research (IMR) Tohoku University 2145‐2 Narita Oarai Ibaraki 311‐1313 Japan

3. Institute for Materials Research (IMR) Tohoku University 2‐1‐1 Katahira Sendai 980‐8577 Japan

4. Adamant Namiki Precision Jewel Co. Ltd. 3‐8‐22 Shinden, Adachi‐ku Tokyo 123‐8511 Japan

5. Department of Electrical and Electronic Engineering Saga University 1 Honjo‐machi Saga 840‐8502 Japan

Funder

New Energy and Industrial Technology Development Organization

Japan Society for the Promotion of Science

Osaka City University

Tohoku University

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202104564

Reference63 articles.

1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

2. Electron effective masses and lattice scattering in natural diamond

3. Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

4. High temperature application of diamond power device

5. 3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology

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