Interlayer Excitons in Transition Metal Dichalcogenide Semiconductors for 2D Optoelectronics-Reference-Cited by-同舟云学术

Interlayer Excitons in Transition Metal Dichalcogenide Semiconductors for 2D Optoelectronics

Published:2022-01-05 Issue: Volume: Page:2107138
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Liu Yuanda¹,Elbanna Ahmed¹²,Gao Weibo²³,Pan Jisheng¹,Shen Zexiang²³,Teng Jinghua¹^ORCID

Affiliation:

1. Institute of Materials Research and Engineering Agency for Science Technology and Research (A*STAR) 2 Fusionopolis Way Singapore 138634 Singapore

2. Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 50 Nanyang Avenue Singapore 637371 Singapore

3. The Photonics Institute and Center for Disruptive Photonic Technologies Nanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore

Funder

Agency for Science, Technology and Research

Ministry of Education

National Research Foundation Singapore

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202107138

Reference172 articles.

1. Phase transition of an exciton system in GaAs coupled quantum wells