Affiliation:
1. Key Laboratory of Materials Physics of Ministry of Education School of Physics and Microelectronics Zhengzhou University Zhengzhou 450052 China
2. Photonic Nanomaterials Istituto Italiano di Tecnologia Via Morego 30 Genova 16163 Italy
3. Qingdao Innovation and Development Base Harbin Engineering University Sansha Str. 1777 Qingdao 266500 China
4. The State Key Laboratory of Luminescent Materials and Devices School of Physics and Optoelectronics South China University of Technology Guangzhou 510641 China
5. Nanochemistry Istituto Italiano di Tecnologia Via Morego 30 Genova 16163 Italy
Abstract
AbstractNear‐Infrared (NIR) light emitting metal halides are emerging as a new generation of optical materials owing to their appealing features, which include low‐cost synthesis, solution processability, and adjustable optical properties. NIR‐emitting perovskite‐based light‐emitting diodes (LEDs) have reached an external quantum efficiency (EQE) of over 20% and a device stability of over 10,000 h. Such results have sparked an interest in exploring new NIR metal halide emitters. In this review, several different types of NIR‐emitting metal halides, including lead/tin bromide/iodide perovskites, lanthanide ions doped/based metal halides, double perovskites, low dimensional hybrid and Bi3+/Sb3+/Cr3+ doped metal halides, are summarized, and their recent advancement is assessed. The characteristics and mechanisms of narrow‐band or broadband NIR luminescence in all these materials are discussed in detail. Also, the various applications of NIR‐emitting metal halides are highlighted and an outlook for the field is provided.
Funder
National Natural Science Foundation of China
HORIZON EUROPE European Research Council
Ministero dello Sviluppo Economico
National Key Research and Development Program of China
China Postdoctoral Science Foundation
Cited by
14 articles.
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