Imaging the Breakdown and Restoration of Topological Protection in Magnetic Topological Insulator MnBi2Te4

Author:

Li Qile12ORCID,Di Bernardo Iolanda123ORCID,Maniatis Johnathon1,McEwen Daniel12,Dominguez‐Celorrio Amelia12ORCID,Bhuiyan Mohammad T. H.1,Zhao Mengting124ORCID,Tadich Anton23ORCID,Watson Liam12ORCID,Lowe Benjamin12ORCID,Vu Thi‐Hai‐Yen1,Trang Chi Xuan12,Hwang Jinwoong56,Mo Sung‐Kwan5ORCID,Fuhrer Michael S.12ORCID,Edmonds Mark T.127ORCID

Affiliation:

1. School of Physics and Astronomy Monash University Clayton Victoria 3168 Australia

2. ARC Centre for Future Low Energy Electronics Technologies Monash University Clayton Victoria Australia

3. Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA‐Nanociencia) Madrid 28049 Spain

4. Australian Synchrotron Clayton Victoria 3168 Australia

5. Advanced Light Source Lawrence Berkeley National Laboratory Berkeley CA 94720 USA

6. Department of Physics and Institute of Quantum Convergence Technology Kangwon National University Chuncheon 24341 Republic of Korea

7. ANFF‐VIC Technology Fellow Melbourne Centre for Nanofabrication Victorian Node of the Australian National Fabrication Facility Clayton Victoria 3168 Australia

Abstract

AbstractQuantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral 1D edge states. Yet, in magnetic topological insulators to date, topological protection is far from robust, with zero‐magnetic field QAH effect only realized at temperatures an order of magnitude below the Néel temperature TN, though small magnetic fields can stabilize QAH effect. Understanding why topological protection breaks down is therefore essential to realizing QAH effect at higher temperatures. Here a scanning tunneling microscope is used to directly map the size of exchange gap (Eg,ex) and its spatial fluctuation in the QAH insulator 5‐layer MnBi2Te4. Long‐range fluctuations of Eg,ex are observed, with values ranging between 0 (gapless) and 70 meV, appearing to be uncorrelated to individual surface point defects. The breakdown of topological protection is directly imaged, showing that the gapless edge state, the hallmark signature of a QAH insulator, hybridizes with extended gapless regions in the bulk. Finally, it is unambiguously demonstrated that the gapless regions originate from magnetic disorder, by demonstrating that a small magnetic field restores Eg,ex in these regions, explaining the recovery of topological protection in magnetic fields. The results indicate that overcoming magnetic disorder is the key to exploiting the unique properties of QAH insulators.

Funder

Australian Government

Centre of Excellence in Future Low-Energy Electronics Technologies, Australian Research Council

Publisher

Wiley

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