34.4: High electrical stability nanocrystalline silicon BCE TFTs for outdoor display application on large glass substrates-Reference-Cited by-同舟云学术

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34.4: High electrical stability nanocrystalline silicon BCE TFTs for outdoor display application on large glass substrates

Published:2021-08 Issue:S2 Volume:52 Page:458-461
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Mai Jiaying¹,Jiang Zhixiong¹,Xu Hongyuan¹,Zhu Maoxia¹,Hu Cong¹,Wang Xu¹,Son Woosung¹

Affiliation:

1. TCL China Star Optoelectronics Technology Co., Ltd. Shenzhen Guangdong China

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.15160

Reference12 articles.

1. Investigation of intrinsic channel characteristics of hydrogenated amorphous silicon thin-film transistors by gated-four-probe structure

2. Formation of nanocrystalline silicon dots from chlorinated materials by RF plasma-enhanced chemical vapor deposition

3. High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition

4. Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities

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