11‐2: A 9 kfps 1411 PPI GaN‐based µLED Display CMOS Backplane

Abstract

The revolution of the GaN‐on‐Si hybrid integration has redefined microdisplay as a point‐light source for scientific, communication and visualization applications, thanks to their superior capabilities in terms of resolution, brightness and switching speed. In this work, we present a CMOS (Complementary Metal‐Oxide Semiconductor) backplane able to exploit the GaN microarrays capabilities, producing high‐speed patterns (up to 9.15 kfps) at high optical intensities (up to 120 uA per pixel and 16 grey levels) at an unprecedented resolution of 1411 PPI (512×512 pixel with 18um pitch). In addition, the backplane can be operated in pulsed mode, allowing the entire array to be toggled between the stored frame and off state at 1 MHz. Its unique characteristics expand the range of possible applications, from fluorescence‐based performance assays to the manufacturing of DNA chips.