Dielectric‐Screening Reduction‐Induced Large Transport Gap in Suspended Sub‐10 nm Graphene Nanoribbon Functional Devices-Reference-Cited by-同舟云学术

Dielectric‐Screening Reduction‐Induced Large Transport Gap in Suspended Sub‐10 nm Graphene Nanoribbon Functional Devices

Published:2019-10 Issue:46 Volume:15 Page:1903025
ISSN:1613-6810
Container-title:Small
language:en
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Author:

Schmidt Marek E.¹^ORCID,Muruganathan Manoharan¹^ORCID,Kanzaki Teruhisa¹,Iwasaki Takuya¹,Hammam Ahmed M. M.¹²,Suzuki Shunei¹,Ogawa Shinichi³,Mizuta Hiroshi¹⁴

Affiliation:

1. School of Materials Science Japan Advanced Institute of Science and Technology 1‐1 Asahidai, Nomi Ishikawa 923‐1292 Japan

2. Physics Department Faculty of Science Minia University 11432 Main Road—Shalaby Land Minia 61519 Egypt

3. Nanoelectronics Research Institute National Institute of Advanced Industrial Science and Technology (AIST) 16‐1 Onogawa Tsukuba 305‐8569 Japan

4. Hitachi Cambridge Laboratory Hitachi Europe Ltd. J. J. Thomson Avenue Cambridge CB3 0HE UK

Funder

Japan Science and Technology Agency

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201903025

Reference45 articles.

1. Ultrahigh electron mobility in suspended graphene

2. Graphene Nanoribbons with Atomically Sharp Edges Produced by AFM Induced Self-Folding

3. Thermal AND Gate Using a Monolayer Graphene Nanoribbon

4. Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors

5. Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors

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