Low Carrier Density Epitaxial Graphene Devices On SiC-Reference-Cited by-同舟云学术

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Low Carrier Density Epitaxial Graphene Devices On SiC

Published:2014-08-18 Issue:1 Volume:11 Page:90-95
ISSN:1613-6810
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language:en
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Author:

Yang Yanfei¹²,Huang Lung-I.¹³,Fukuyama Yasuhiro⁴,Liu Fan-Hung⁵,Real Mariano A.⁶,Barbara Paola²,Liang Chi-Te³⁵,Newell David B.¹,Elmquist Randolph E.¹

Affiliation:

1. National Institute of Standards and Technology (NIST); Gaithersburg MD 20899-8171

2. Department of Physics; Georgetown University; Washington DC 20057-1228

3. Department of Physics; National Taiwan University; Taipei 10617 Taiwan

4. National Metrology Institute of Japan (NMIJ/AIST); Tsukuba Ibaraki 305-8563 Japan

5. Graduate Institute of Applied Physics; National Taiwan University; Taipei 10617 Taiwan

6. Instituto Nacional de Tecnologia Industrial; San Martin, Buenos Aires B1650WAB Argentina

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference31 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The electronic properties of graphene

3. Ultrahigh electron mobility in suspended graphene

4. Two-dimensional gas of massless Dirac fermions in graphene

5. Experimental observation of the quantum Hall effect and Berry's phase in graphene

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