Atomic-Monolayer MoS2Band-to-Band Tunneling Field-Effect Transistor-Reference-Cited by-同舟云学术

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Atomic-Monolayer MoS2Band-to-Band Tunneling Field-Effect Transistor

Published:2016-09-04 Issue:41 Volume:12 Page:5676-5683
ISSN:1613-6810
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language:en
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Author:

Lan Yann-Wen¹²,Torres Carlos M.²,Tsai Shin-Hung²,Zhu Xiaodan²,Shi Yumeng³,Li Ming-Yang³⁴,Li Lain-Jong³,Yeh Wen-Kuan¹⁵,Wang Kang L.²

Affiliation:

1. National Nano Device Laboratories (NDL); National Applied Research Laboratories; Hsinchu 30078 Taiwan

2. Department of Electrical Engineering; University of California at Los Angeles; Los Angeles CA 90095 USA

3. Physical Sciences and Engineering Division; King Abdullah University of Science and Technology (KAUST); Thuwal 23955-6900 Kingdom of Saudi Arabia

4. Research Center for Applied Sciences; Academia Sinica; Taipei 10617 Taiwan

5. Department of Electrical Engineering; National University of Kaohsiung; Kaohsiung 811 Taiwan

Funder

National Science Council

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference38 articles.

1. Tunnel field-effect transistors as energy-efficient electronic switches

2. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

3. Low-subthreshold-swing tunnel transistors

4. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors

5. Vertical Tunnel Field-Effect Transistor

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