Performance comparison of RF energy harvesting rectifiers designed in CMOS FDSOI 28 nm with dynamic back gate biasing and BiCMOS 55 nm technology
Author:
Affiliation:
1. Institute of Engineering, Grenoble INP, IMEP‐LaHC Université Grenoble Alpes, CNRS Grenoble France
2. Institute of Engineering, Grenoble INP, G2Elab Université Grenoble Alpes, CNRS Grenoble France
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/mop.32771
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4. F.Botmanet al. "Bellevue: a 50MHz variable‐width SIMD 32bit microcontroller at 0.37V for processing‐intensive wireless sensor nodes" Paper presented at: ISCAS Melbourne VIC 2014 pp.1207–1210.
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