Affiliation:
1. School of Electronic Science and Engineering Nanjing University Nanjing China
Abstract
AbstractThis paper presents a Ku‐band divide‐by‐2 direct injection‐locked frequency divider (ILFD) with a wide locking range (LR) and high input sensitivity. The proposed ILFD incorporates an auto‐adjusted injection bias that uses a power detector (PD) to convert the power of the injected signal to a DC voltage. The bias voltage of the injection transistor is then auto‐adjusted in response to the output of the PD. The proposed ILFD employs a 2‐bit switched capacitor array to further enhance the entire LR. Implemented in a 65‐nm CMOS process, the experimental results show that the proposed ILFD achieves an LR of 62.3% (10.5–20 GHz) and 51.2% (11.2–18.9 GHz) at 0 and −10 dBm injection power, respectively. The proposed ILFD consumes 3.6 mW from a 0.6 V supply, and the core area is 0.067 mm2.