Temperature Tunable Self‐Doping in Stable Diradicaloid Thin‐Film Devices-Reference-Cited by-同舟云学术

Temperature Tunable Self‐Doping in Stable Diradicaloid Thin‐Film Devices

Author:

Zhang Yuan¹²,Zheng Yonghao¹³,Zhou Huiqiong⁴,Miao Mao‐Sheng⁵⁶,Wudl Fred¹,Nguyen Thuc‐Quyen¹

Affiliation:

1. Center for Polymers and Organic Solids University of California Santa Barbara CA 93106 USA

2. School of Chemistry and Environment Beihang University Beijing 100191 P. R. China

3. Tohoku University WPI‐AIMR and CNSI Joint Center University of California Santa Barbara CA 93106 USA

4. National Center for Nanoscience and Technology Beijing 100190 P. R. China

5. Department of Chemistry and Biochemistry California State University Northridge Northridge CA 91330 USA

6. Beijing Computational Science Research Center Beijing 10084 P. R. China

Funder

Department of Energy Office of Basic Energy Sciences

Department of Energy

WPI AIMR-CNSI joint center at the University of California

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

Reference50 articles.

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