Carbon Nanotube Network Ambipolar Field-Effect Transistors with 108On/Off Ratio-Reference-Cited by-同舟云学术

Carbon Nanotube Network Ambipolar Field-Effect Transistors with 108On/Off Ratio

Published:2014-07-19 Issue:34 Volume:26 Page:5969-5975
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Derenskyi Vladimir¹,Gomulya Widianta¹,Rios Jorge Mario Salazar¹,Fritsch Martin²,Fröhlich Nils²,Jung Stefan²,Allard Sybille²,Bisri Satria Zulkarnaen¹,Gordiichuk Pavlo¹,Herrmann Andreas¹,Scherf Ullrich²,Loi Maria Antonietta¹

Affiliation:

1. Zernike Institute for Advanced Materials; University of Groningen; Nijenborgh 4 Groningen 9747 AG The Netherlands

2. Chemistry Department and Institute for Polymer Technology; University of Wuppertal; Gauss-Strasse 20 42119 Wuppertal Germany

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201401395/fullpdf

Reference29 articles.

1. Outlook and Emerging Semiconducting Materials for Ambipolar Transistors

2. International Technology Roadmap for Semiconductors, Emerging Research Devices ITRS 2011 www.itrs.net

3. Length scaling of carbon nanotube transistors

4. Sub-10 nm Carbon Nanotube Transistor

5. Thin Film Nanotube Transistors Based on Self-Assembled, Aligned, Semiconducting Carbon Nanotube Arrays

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