High-Performance Printed Transistors Realized Using Femtoliter Gravure-Printed Sub-10 μm Metallic Nanoparticle Patterns and Highly Uniform Polymer Dielectric and Semiconductor Layers-Reference-Cited by-同舟云学术

High-Performance Printed Transistors Realized Using Femtoliter Gravure-Printed Sub-10 μm Metallic Nanoparticle Patterns and Highly Uniform Polymer Dielectric and Semiconductor Layers

Published:2012-05-09 Issue:22 Volume:24 Page:3065-3069
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Kang Hongki,Kitsomboonloha Rungrot,Jang Jaewon,Subramanian Vivek

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201200924/fullpdf

Reference20 articles.

1. Ring oscillator fabricated completely by means of mass-printing technologies

2. Polymer Field-Effect Transistors Fabricated by the Sequential Gravure Printing of Polythiophene, Two Insulator Layers, and a Metal Ink Gate

3. Novel in-line method for patterned deposition of conductive structures

4. Uniformity of fully gravure printed organic field-effect transistors

5. Modified mass printing technique for the realization of source/drain electrodes with high resolution

Cited by 165 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of Biomedical Electrodes Using Printing Approaches;Biomedical Materials & Devices;2024-04-22

2. Electrical and mechanical performance of Inkjet-printed flexible electrodes based on reduced graphene oxide/silver nanoparticles;Journal of Materials Science: Materials in Electronics;2024-03

3. Double Alkyl Side Chains Functionalized Polyimide as Gate Dielectrics for Application in Organic Transistors;The Journal of Physical Chemistry C;2023-11-06

4. Arc-to-sheet printer for high-precision patterning with positional errors below 6 ppm at 3σ level: Trochoidal trajectory mechanism for rotary motion of arc;Precision Engineering;2023-09

5. Optimization of Alkyl Side Chain Length in Polyimide for Gate Dielectrics to Achieve High Mobility and Outstanding Operational Stability in Organic Transistors;ACS Applied Materials & Interfaces;2023-01-29