A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering-Reference-Cited by-同舟云学术

A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

Published:2015-09-23 Issue:41 Volume:27 Page:6519-6525
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Ho Kuan-I¹,Boutchich Mohamed²,Su Ching-Yuan³,Moreddu Rosalia⁴,Marianathan Eugene Sebastian Raj⁵,Montes Laurent⁶,Lai Chao-Sung¹

Affiliation:

1. Department of Electronic Engineering; Chang Gung University; Kwei-Shan, Tao-Yuan 333 Taiwan

2. GeePs, CNRS UMR8507; CentraleSupelec, Univ Paris-Sud; Sorbonne Universités-UPMC Univ Paris 06; 11 Rue Joliot-Curie, Plateau de Moulon Gif-sur-Yvette 91192 CEDEX France

3. Graduate Institute of Energy Engineering; National Central University; Jhongli City Taoyuan County 32001 Taiwan

4. Department of Electronic Engineering; Polytechnic of Turin; Corso Duca degli Abruzzi 24 10129 Torino Italy

5. Grenoble INP-Phelma; Université Grenoble Alpes; 3 Parvis Louis Néel, BP 257 38016 Grenoble CEDEX 01 France

6. IMEP-LAHC; Grenoble INP; Minatec, BP 257 38016 Grenoble France

Funder

Ministère des Affaires Etrangères

Centre National de la Recherche Scientifique

French National Research Agency

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference61 articles.

1. Roll-to-roll production of 30-inch graphene films for transparent electrodes

2. Graphene transistors

3. Graphene: Status and Prospects

4. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

5. Fine Structure Constant Defines Visual Transparency of Graphene

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