Defect Engineering for Modulating the Trap States in 2D Photoconductors-Reference-Cited by-同舟云学术

Defect Engineering for Modulating the Trap States in 2D Photoconductors

Published:2018-08-31 Issue:40 Volume:30 Page:1804332
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Jiang Jie¹,Ling Chongyi¹,Xu Tao²,Wang Wenhui¹,Niu Xianghong³,Zafar Amina¹,Yan Zhenzhong¹,Wang Xiaomu⁴,You Yumeng⁵,Sun Litao²,Lu Junpeng¹,Wang Jinlan¹,Ni Zhenhua¹^ORCID

Affiliation:

1. School of Physics and Key Laboratory of MEMS of the Ministry of Education; Southeast University; Nanjing 211189 China

2. SEU-FEI Nano-Pico Center; Key Laboratory of MEMS of Ministry of Education; Southeast University; Nanjing 210096 China

3. School of Science; Nanjing University of Posts and Telecommunications; Nanjing 210046 China

4. School of Electronic Science and Technology; Nanjing University; Nanjing 210093 China

5. Ordered Matter Science Research Center; Southeast University; Nanjing 211189 China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Jiangsu 333 project

open research funds of Key Laboratory of MEMS of Ministry of Education (SEU, China)

Fundamental Research Funds for the Central Universities

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201804332/fullpdf

Reference38 articles.

1. Photodetectors based on graphene, other two-dimensional materials and hybrid systems

2. Photogating in Low Dimensional Photodetectors

3. Synergistic Effects of Plasmonics and Electron Trapping in Graphene Short-Wave Infrared Photodetectors with Ultrahigh Responsivity

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