Observation of Strong Interlayer Coupling in MoS2 /WS2 Heterostructures-Reference-Cited by-同舟云学术

Observation of Strong Interlayer Coupling in MoS2 /WS2 Heterostructures

Published:2015-12-28 Issue:10 Volume:28 Page:1950-1956
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Zhang Jing¹,Wang Jinhuan²,Chen Peng¹,Sun Yue¹,Wu Shuang¹,Jia Zhiyan³,Lu Xiaobo¹,Yu Hua¹,Chen Wei¹,Zhu Jianqi¹,Xie Guibai⁴,Yang Rong¹,Shi Dongxia¹,Xu Xiulai¹,Xiang Jianyong³,Liu Kaihui²⁵,Zhang Guangyu¹⁵

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics; Chinese Academy of Sciences; Beijing 100190 China

2. State Key Laboratory for Mesoscopic Physics; School of Physics; Peking University; Beijing 100871 China

3. State Key Laboratory for Metastable Materials Science and Technology; Yanshan University; Qinhuangdao 066004 China

4. National Key Laboratory of Science and Technology on Space Microwave; China Academy of Space Technology; Xi'an 170100 China

5. Collaborative Innovation Center of Quantum Matter; Beijing 100190 China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201504631/fullpdf

Reference38 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Single-layer MoS2 transistors

4. Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2

5. Mobility engineering and a metal–insulator transition in monolayer MoS2

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