p-Type MoS2and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect-Reference-Cited by-同舟云学术

p-Type MoS2and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect

Published:2016-03-03 Issue:17 Volume:28 Page:3391-3398
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Xue Fei¹,Chen Libo¹,Chen Jian¹,Liu Jingbin¹,Wang Longfei¹,Chen Mengxiao¹,Pang Yaokun¹,Yang Xiaonian¹,Gao Guoyun¹,Zhai Junyi¹,Wang Zhong Lin¹²

Affiliation:

1. Beijing Institute of Nanoenergy and Nanosystems; Chinese Academy of Sciences; National Center for Nanoscience and Technology (NCNST); Beijing 100083 P. R. China

2. School of Materials Science and Engineering; Georgia Institute of Technology; Atlanta GA 30332 USA

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201506472/fullpdf

Reference42 articles.

1. Single-layer MoS2 transistors

2. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

3. Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature

4. Single-Layer MoS2 Phototransistors

5. Ultrasensitive photodetectors based on monolayer MoS2

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