A Synaptic Transistor based on Quasi-2D Molybdenum Oxide-Reference-Cited by-同舟云学术

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A Synaptic Transistor based on Quasi-2D Molybdenum Oxide

Published:2017-05-09 Issue:27 Volume:29 Page:1700906
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Yang Chuan Sen¹,Shang Da Shan¹^ORCID,Liu Nan¹,Shi Gang¹,Shen Xi¹,Yu Ri Cheng¹,Li Yong Qing¹,Sun Young¹

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics; Institute of Physics; Chinese Academy of Sciences; Beijing 100190 P. R. China

Funder

National Natural Science Foundation of China

National Key Research Program of China

Chinese Academy of Sciences

Opening Project of the State Key Laboratory of High Performance Ceramics and Superfine Microstructure

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201700906/fullpdf

Reference66 articles.

1. The Molecular Biology of Memory Storage: A Dialogue Between Genes and Synapses

2. Selective Induction of LTP and LTD by Postsynaptic [Ca2+]i Elevation

3. A unified model of NMDA receptor-dependent bidirectional synaptic plasticity

4. Towards artificial neurons and synapses: a materials point of view

5. Synaptic electronics: materials, devices and applications

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