Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors-Reference-Cited by-同舟云学术

Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors

Published:2016-01-13 Issue:10 Volume:28 Page:2062-2069
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Zou Xuming¹,Huang Chun-Wei²,Wang Lifeng³,Yin Long-Jing⁴,Li Wenqing¹,Wang Jingli¹,Wu Bin³,Liu Yunqi³,Yao Qian⁵,Jiang Changzhong¹,Wu Wen-Wei²,He Lin⁴,Chen Shanshan⁵,Ho Johnny C.⁶,Liao Lei¹

Affiliation:

1. Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education; Wuhan University; Wuhan 430072 China

2. Department of Materials Science and Engineering; National Chiao Tung University; Hsin-chu 30010 Taiwan

3. Beijing National Laboratory for Molecular Sciences; Key Laboratory of Organic Solids; Institute of Chemistry; Chinese Academy of Science; Beijing 100190 China

4. Center for Advanced Quantum Studies; Department of Physics; Beijing Normal University; Beijing 100875 China

5. Physics Department; Xiamen University; Xiamen 361005 China

6. Department of Physics and Materials Science; City University of Hong Kong; Tat Chee Avenue Kowloon Hong Kong SAR China

Funder

MOST

MOE

NSFC

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Chinese Academy of Sciences and the Strategic Priority Research Program of the Chinese Academy of Sciences

Ministry of Science and Technology

Publisher