Influence of boron clustering on the emitter quality of implanted silicon solar cells: an atom probe tomography study

Author:

Raghuwanshi Mohit1ORCID,Lanterne Adeline23,Le Perchec Jérôme23,Pareige Philippe1,Cadel Emmanuel1,Gall Samuel23,Duguay Sébastien1

Affiliation:

1. Groupe de Physique des Materiaux (GPM), UMR 6634 CNRS; Université et INSA de Rouen; Avenue de l'Universite BP 12 76801 Saint-Etienne-du-Rouvray France

2. Université Grenoble Alpes; INES; F-73375 Le Bourget-du-Lac France

3. CEA; LITEN, Department of Solar Technologies; F-73375 Le Bourget du Lac France

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. ITRPV, “International Technology Roadmap for Photovoltaic (ITRPV.net) Results 2013,” Mar-2014. [Online] 2013 http://www.itrpv.net/Reports/Downloads/2014/

2. Veschetti Y Sanzone V Diagne F Auriac N Heslinga D High efficieny n-type silicon solar cells with novel diffusion technique for emitter formation Proceedings 25th Eur. Photovolt. Sol. Energy Conf. Exhib. / WCPEC-5 2010 10.4229/25thEUPVSEC2010-2CV.3.48

3. High-throughput ion-implantation for low-cost high-efficiency silicon solar cells;Rohatgi;Energy Procedia,2012

4. High throughput ion-implantation for silicon solar cells;Hieslmair;Energy Procedia,2012

5. Low R Gupta A Bateman N Ramappa D Sullivan P Skinner W Mullin J Peters S Weiss-Wallrath H High efficiency selective emitter enabled through patterned ion implantation Proceedings of the 35th IEEE Photovoltaic Specialists Conference, 2010 10.1109/PVSC.2010.5614426

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