Alternate characterization technique for static random-access memory static noise margin determination-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Alternate characterization technique for static random-access memory static noise margin determination

Published:2012-07-27 Issue:10 Volume:41 Page:1085-1096
ISSN:0098-9886
Container-title:International Journal of Circuit Theory and Applications
language:en
Short-container-title:Int. J. Circ. Theor. Appl.

Author:

Merino Jose Luis¹,Bota Sebastia Antoni¹,Picos Rodrigo¹,Segura Jaume¹

Affiliation:

1. Universitat de les Illes Balears; Departament de Fisica; Cra. Valldemossa, km. 7.5 07122 Palma de Mallorca Spain

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/cta.1832/fullpdf

Reference19 articles.

1. Inaba S Kawasaki H Okano K Izumida T Yagishita A Kaneko A Ishimaru K Aoki N Toyoshima Y Direct evaluation of DC characteristics variability in FinFET SRAM cell for 32 nm node and beyond 2007 487 490

2. A 65 nm test structure for SRAM device variability and NBTI statistics;Fischer;Solid State Electronics,2009

3. Sensing margin trend with technology scaling in MRAM;Song;International Journal of Circuit Theory and Applications,2011

4. Static-noise margin analysis of MOS SRAM cells;Seevinck;IEEE Journal of Solid-State Circuits,1987

5. Read stability and write-ability analysis of SRAM cells for nanometer technologies;Grossar;IEEE Journal of Solid-State Circuits,2009

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation‐hardened read‐decoupled low‐power 12T SRAM for space applications;International Journal of Circuit Theory and Applications;2021-07-15

2. A simultaneously bidirectional inductively coupled link in a 0.13-µm CMOS technology;International Journal of Circuit Theory and Applications;2016-07-05

3. A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages;International Journal of Circuit Theory and Applications;2015-01-13

4. Automating the sizing of transistors in CMOS gates for low-power and high-noise margin operation;International Journal of Circuit Theory and Applications;2014-10-16

5. SRAM Alpha-SER Estimation From Word-Line Voltage Margin Measurements: Design Architecture and Experimental Results;IEEE Transactions on Nuclear Science;2014-08

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3