Affiliation:
1. State Key Lab of Physical Chemistry of Solid Surfaces State-Province Joint Engineering Laboratory of Power Source Technology for New Energy Vehicle College of Chemistry and Chemical Engineering Xiamen University Xiamen 361005 P. R. China
2. School of Chemical Engineering and Light Industry Guangdong University of Technology Guangzhou 510006 P. R. China
Abstract
AbstractFor zinc‐metal batteries, the instable chemistry at Zn/electrolyte interphasial region results in severe hydrogen evolution reaction (HER) and dendrite growth, significantly impairing Zn anode reversibility. Moreover, an often‐overlooked aspect is this instability can be further exacerbated by the interaction with dissolved cathode species in full batteries. Here, inspired by sustained‐release drug technology, an indium‐chelated resin protective layer (Chelex‐In), incorporating a sustained‐release mechanism for indium, is developed on Zn surface, stabilizing the anode/electrolyte interphase to ensure reversible Zn plating/stripping performance throughout the entire lifespan of Zn//V2O5 batteries. The sustained‐release indium onto Zn electrode promotes a persistent anticatalytic effect against HER and fosters uniform heterogeneous Zn nucleation. Meanwhile, on the electrolyte side, the residual resin matrix with immobilized iminodiacetates anions can also repel detrimental anions (SO42− and polyoxovanadate ions dissolved from V2O5 cathode) outside the electric double layer. This dual synergetic regulation on both electrode and electrolyte sides culminates a more stable interphasial environment, effectively enhancing Zn anode reversibility in practical high‐areal‐capacity full battery systems. Consequently, the bio‐inspired Chelex‐In protective layer enables an ultralong lifespan of Zn anode over 2800 h, which is also successfully demonstrated in ultrahigh areal capacity Zn//V2O5 full batteries (4.79 mAh cm−2).
Funder
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
Cited by
1 articles.
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