Sulfur impurity level in the O‐rich ZnS x O 1 − x alloy obtained by first principle calculations-Reference-Cited by-同舟云学术

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Sulfur impurity level in the O‐rich ZnS x O 1 − x alloy obtained by first principle calculations

Published:2021-02-03 Issue:9 Volume:121 Page:
ISSN:0020-7608
Container-title:International Journal of Quantum Chemistry
language:en
Short-container-title:Int J Quantum Chem

Author:

Zhao Chuan‐Zhen¹,Yu Huang¹,Zhu Min‐Min¹,Sun Si‐Yu¹,Guo Yu¹

Affiliation:

1. Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering Tiangong University Tianjin China

Publisher

Wiley

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/qua.26604

Reference29 articles.

1. Structure and optical band gap of ZnO1−xSx thin films synthesized by chemical spray pyrolysis for application in solar cells

2. Strong Valence-Band Offset Bowing ofZnO1−xSxEnhancesp-Type Nitrogen Doping of ZnO-like Alloys

3. S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method

4. Band-gap bowing coefficients in large size-mismatched II-VI alloys: first-principles calculations

5. A theoretical study of thermal stability and electronic properties of wurtzite and zincblende ZnOxS1−x

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tellurium level and bandgap energy of the O-rich ZnTexO1−x alloy calculated by first-principles calculations;Applied Physics A;2022-08-21

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