Hot carrier energy losses in conducting layers of AlGaN/GaN heterostructures grown on SiC and Al2O3substrates-Reference-Cited by-同舟云学术

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Hot carrier energy losses in conducting layers of AlGaN/GaN heterostructures grown on SiC and Al2O3substrates

Published:2006-06 Issue:7 Volume:243 Page:1529-1532
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Danilchenko B. A.,Zelensky S. E.,Drok E.,Vitusevich S. A.,Danylyuk S. V.,Klein N.,Lüth H.,Belyaev A. E.,Kochelap V. A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. GaN: Processing, defects, and devices

2. High-field transport in wide-band-gap semiconductors

3. Transient electron transport in wurtzite GaN, InN, and AlN

4. Theoretical study of the two-dimensional electron mobility in strained III-nitride heterostructures

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theory of high-field electron transport in the heterostructures AlxGa1-xAs/GaAs/AlxGa1-x with delta-doped barriers. Effect of real-space transfer;Semiconductor Physics, Quantum Electronics & Optoelectronics;2015-03-25

2. Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN;Open Physics;2012-01-01

3. Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates;The European Physical Journal Applied Physics;2011-08-18

4. Enhancement by electric field of high-speed photoconductivity in AlGaN∕GaN heterostructures;Applied Physics Letters;2007-04-09

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