Limits of In(Ga)As/GaAs quantum dot growth-Reference-Cited by-同舟云学术

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Limits of In(Ga)As/GaAs quantum dot growth

Published:2009-04 Issue:4 Volume:246 Page:717-720
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi (b)

Author:

Lenz A.,Eisele H.,Timm R.,Ivanova L.,Sellin R. L.,Liu H.-Y.,Hopkinson M.,Pohl U. W.,Bimberg D.,Dähne M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. M. Grundmann(ed.), Nano-Optoelectronics: Concepts, Physics and Devices, NanoScience and Technology (Springer, Berlin, 2002).

2. V. Shchukin, N. N. Ledentsov, and D. Bimberg, Epitaxy of Nanostructures (Springer, Berlin, 2003).

3. Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates

4. Strain engineering of self-organized InAs quantum dots

5. Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes

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1. Strain analysis from nano-beam electron diffraction: Influence of specimen tilt and beam convergence;Ultramicroscopy;2018-07

2. Samples and Characterization;Quantum-Dot-Based Semiconductor Optical Amplifiers for O-Band Optical Communication;2016-10-22

3. Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate;Applied Physics Letters;2016-04-04

4. Excitonic fine-structure splitting in telecom-wavelength InAs/GaAs quantum dots: Statistical distribution and height-dependence;Applied Physics Letters;2013-12-09

5. Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs;Applied Physics Express;2010-10-15

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