The nitrogen–hydrogen–vacancy complex in GaAs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. OH bonds in gallium arsenide grown by the liquid-encapsulated Czochralski crystal-growth method
2. On the Way to the Investigation of Hydrogen in GaN: Hydrogen in Nitrogen Doped GaP and GaAs
3. Vibrational modes of a hydrogen-impurity centre in LEC-GaAs
4. Vibrational modes of a di-hydrogen complex in GaAs
5. Vibrational Absorption of Hydrogen Bonded to Interstitial Oxygen in GaAs and GaP
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. N–H-related deep-level defects in dilute nitride semiconductor GaInNAs for four-junction solar cells;Japanese Journal of Applied Physics;2018-07-11
2. Piezospectroscopy and first-principles calculations of the nitrogen-vacancy center in gallium arsenide;Journal of Applied Physics;2018-04-28
3. Effects of source gas molecules on N–H- and N–D-related defect formations in GaAsN grown by chemical beam epitaxy;Japanese Journal of Applied Physics;2015-03-13
4. N–H related defects in GaAsN grown through chemical beam epitaxy;Japanese Journal of Applied Physics;2014-02-13
5. Introduction;Springer Series in Solid-State Sciences;2011-10-27
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3