Oxygen induced band-gap reduction in ZnOxSe1−x alloys
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
3. Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x
4. Photocurrent of 1eV GaInNAs lattice-matched to GaAs
5. Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen
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1. The temperature dependence of the band-gap energy of the dilute oxygen ZnO x Se1−x;Applied Physics A;2017-02
2. Effects of band anticrossing on the temperature dependence of the band gap of ZnSe1−xOxalloys;Semiconductor Science and Technology;2016-12-19
3. Dielectric functions and critical points of PbTiO3, PbZrO3, and PbZr0.57Ti0.43O3 grown on SrTiO3 substrate;Applied Physics Letters;2007-07-09
4. Ion relaxation and hydrogen LVM in H-irradiated GaAsN;Physica B: Condensed Matter;2006-04
5. Hydrogen pairs and local vibrational frequencies in H-irradiatedGaAs1−yNy;Physical Review B;2005-08-04
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