Interfacial steps, dislocations, and inversion domain boundaries in the GaN/AlN/Si (0001)/(111) epitaxial system-Reference-Cited by-同舟云学术

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Interfacial steps, dislocations, and inversion domain boundaries in the GaN/AlN/Si (0001)/(111) epitaxial system

Published:2005-07 Issue:8 Volume:242 Page:1617-1627
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Dimitrakopulos G. P.,Sanchez A. M.,Komninou Ph.,Kehagias Th.,Karakostas Th.,Nouet G.,Ruterana P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. Substrates for gallium nitride epitaxy

2. From visible to white light emission by GaN quantum dots on Si(111) substrate

3. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy

4. Green electroluminescent (Ga, In, Al)N LEDs grown on Si (111)

5. Submicron metal–semiconductor–metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation

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1. Surface and dislocation investigation of planar GaN formed by crystal reformation of nanowire arrays;Physical Review Materials;2019-09-25

2. Optical properties of GaN nanowires grown on chemical vapor deposited-graphene;Nanotechnology;2019-03-14

3. LEDs Based on Heteroepitaxial GaN on Si Substrates;Topics in Applied Physics;2017

4. Bibliography;Integrated Lasers on Silicon;2016

5. Self-annihilation of inversion domains by high energy defects in III-Nitrides;Applied Physics Letters;2014-04-07

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