Long life operations over 5000 hours of BeZnSeTe/MgZnCdSe visible light emitting diodes on InP substrates
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Molecular beam epitaxial growth of MgZnCdSe on (100) InP substrates
2. Wide bandgap over 3eV and high p-doping BeZnTe grown on InP substrates by molecular beam epitaxy
3. II-VI semiconductors on InP for green-yellow emitters
4. Yellow-green ZnCdSe/BeZnTe II-VI laser diodes grown on InP substrates
5. Proposal of a novel BeZnSeTe quaternary for II-VI middle range visible light emitting devices on InP substrates
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2. Investigation of the n-side structures of II-VI compound semiconductor optical devices on InP substrates;Journal of Crystal Growth;2019-04
3. Evaluation of the Conduction Band Discontinuity of MgSe/ZnCdSe Heterojunctions on InP Substrates Using n–i–n Diodes;Journal of Electronic Materials;2018-05-24
4. Application of indium tin oxide to the p-cladding layers of yellow/green II-VI compound semiconductor laser diode structures on InP substrates;physica status solidi (c);2016-02-09
5. Investigation of p-side contact layers for II–VI compound semiconductor optical devices fabricated on InP substrates by MBE;Journal of Crystal Growth;2015-09
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