Structure analysis of ELO-GaN using a 2× 4μm2 micro-beam X-ray of an 8-GeV storage ring-Reference-Cited by-同舟云学术

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Structure analysis of ELO-GaN using a 2× 4μm2 micro-beam X-ray of an 8-GeV storage ring

Published:2003-11 Issue:2 Volume:240 Page:285-288
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Miyajima T.,Takeya M.,Goto S.,Tomiya S.,Takeda S.,Kurihara H.,Watanabe K.,Kato M.,Hara N.,Tsusaka Y.,Matsui J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructural analysis of an epitaxial AlN thick film/trench-patterned template by three-dimensional reciprocal lattice space mapping technique;Applied Physics Express;2016-10-11

2. Positional dependence of defect distribution in semipolar $(20\bar{2}1)$ hydride vapor phase epitaxy-GaN films grown on $(22\bar{4}3)$ patterned sapphire substrates;Japanese Journal of Applied Physics;2016-04-12

3. Thickness and growth condition dependence of crystallinity in semipolar (20-21) GaN films grown on (22-43) patterned sapphire substrates;physica status solidi (b);2015-02-25

4. Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction and transmission electron microscopy;physica status solidi (b);2015-02-04

5. Direct observation of indium compositional fluctuation in GaInN/GaN multi-quantum wells using an X-ray micro-beam from the 8-GeV storage ring;physica status solidi (c);2008-05

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