Recombination mechanisms in InAs/InP quantum dash lasers studied using high hydrostatic pressure-Reference-Cited by-同舟云学术

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Recombination mechanisms in InAs/InP quantum dash lasers studied using high hydrostatic pressure

Published:2004-11 Issue:14 Volume:241 Page:3427-3431
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Marko I. P.,Sweeney S. J.,Adams A. R.,Jin S. R.,Murdin B. N.,Schwertberger R.,Somers A.,Reithmaier J. P.,Forchel A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Long wavelength lasers on GaAs substrates

2. Orientation dependence of the optical properties in InAs quantum-dash lasers on InP

3. InAs∕InP 1550 nm quantum dash semiconductor optical amplifiers

4. Long-wavelength InP-based quantum-dash lasers

5. Lasing characteristics of InAs quantum-dot lasers on (001) InP substrate

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4. Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs);Scientific Reports;2016-01-19

5. High-Performance Quantum-Dot Lasers;Reference Module in Materials Science and Materials Engineering;2016

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