Investigation of the localization effect in InGaNAs/GaAs SQWs using the LSE model
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.200844364/fullpdf
Reference29 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
3. GaInNAs: a novel material for long-wavelength semiconductor lasers
4. Tunable long-wavelength vertical-cavity lasers: the engine of next generation optical networks?
5. Very low threshold current density 1.29 [micro sign]m GaInNAs triple quantum well lasers grown by MBE
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