InAlAs photovoltaic cell design for high device efficiency-Reference-Cited by-同舟云学术

InAlAs photovoltaic cell design for high device efficiency

Published:2017-04-17 Issue:8 Volume:25 Page:706-713
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Smith Brittany L.¹^ORCID,Bittner Zachary S.¹,Hellstroem Staffan D.¹,Nelson George T.¹,Slocum Michael A.¹,Norman Andrew G.²^ORCID,Forbes David V.¹,Hubbard Seth M.¹^ORCID

Affiliation:

1. Rochester Institute of Technology, NanoPower Research Laboratory 168 Lomb Memorial Drive Rochester NY USA 14623

2. NREL, National Center for Photovoltaics 15013 Denver West Parkway Golden CO USA

Funder

Advanced Research Projects Agency - Energy

National Aeronautics and Space Administration

National Renewable Energy Laboratory

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pip.2895

Reference24 articles.

1. InGaAs/InAlAs HEMT with a strained InGaP Schottky contact layer

2. Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz

3. InAlAs solar cell on a GaAs substrate employing a graded InxGa1−xAs–InP metamorphic buffer layer

4. Wide-band-gap InAlAs solar cell for an alternative multijunction approach

5. Wafer-Scale Strain Engineering of Ultrathin Semiconductor Crystalline Layers

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