A Novel Modeling of Millimeter-Wave Al0.27 Ga0.73 N/AlN/GaN Hemt Based on Artificial Neural Network-Reference-Cited by-同舟云学术

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A Novel Modeling of Millimeter-Wave Al0.27 Ga0.73 N/AlN/GaN Hemt Based on Artificial Neural Network

Published:2013-06-27 Issue:9 Volume:55 Page:2124-2127
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Cheng Zhi-qun¹,Wang Xi¹,Zhang Qi-qun²

Affiliation:

1. Key Laboratory of RF Circuit and System; Ministry of Education; Hangzhou Dianzi University; Hangzhou 310018 China

2. Department of Electronics; Carleton University; Ottawa Canada K1S 5B6

Funder

Zhejiang Provincial Natural Science Foundation of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/mop.27776/fullpdf

Reference11 articles.

1. Z.Q. Cheng T. Liu L.W. Jin Z.H. Feng J.B. Song J.Y. Yin Study of millimeter wave AlGaN/AlN/GaN HEMT 2011 2306 2307

2. Effect of composited-layer AlyGa1-yN on performances of AlGaN/GaN HEMT with unintentionally doping barrier AlXGa1-xN;Cheng;Microwave Opt Technol Lett,2011

3. Design of broadband GaN HEMT power amplifier with Ku band;Cheng;Appl Mech Mater,2013

4. Enhancemeng-mode operation of nanachannel array (NCA) AlGaN/GaN HEMTs;Liu;IEEE Electron Device Lett,2012

5. Novel model of A1GaN/GaN high electron mobility transistor based on artificial neural network;Cheng;Chin Phys B,2011

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1. On Temperature-Dependent Small-Signal Behavioral Modelling of GaN HEMT Using GWO-PSO and WOA;2023 International Symposium on Networks, Computers and Communications (ISNCC);2023-10-23

2. A Hybridized Fuzzy-Neural Predictive Intelligent (HFNPI) Modelling Approach-based Underlap FinFET Model;IETE Journal of Research;2018-05-11

3. Development and validation of ANN approach for extraction of MESFET/HEMT noise model parameters;Electrical Engineering;2017-04-21

4. An Extensive Experimental Analysis of the Kink Effects in ${ S}_{22}$ and ${ h}_{21}$ for a GaN HEMT;IEEE Transactions on Microwave Theory and Techniques;2014-03

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