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Design and investigation of stability‐ and power‐improved 11T SRAM cell for low‐power devices

  • Published:2022-07-04 Issue:11 Volume:50 Page:3827-3845
  • ISSN:0098-9886
  • Container-title:International Journal of Circuit Theory and Applications
  • language:en
  • Short-container-title:Circuit Theory & Apps

Author:

Abbasian Erfan1ORCID,Birla Shilpi2ORCID,Mojaveri Moslem Emad3

Affiliation:

1. Faculty of Electrical and Computer Engineering Babol Noshirvani University of Technology Babol Iran

2. Department of Electronics & Communication Engineering Manipal University Jaipur Jaipur India

3. Department of Material Science and Engineering City University of Hong Kong Hong Kong SAR China

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of power efficient and reliable hybrid inverter approach based 11 T SRAM design using GNRFET technology;AEU - International Journal of Electronics and Communications;2024-04

2. Single ended 12T cntfet sram cell with high stability for low power smart device applications;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2024-03

3. Read Improved and Low Leakage Power CNTFET Based Hybrid 10t SRAM Cell for Low Power Applications;Circuits, Systems, and Signal Processing;2023-10-19

4. Single-sided gate-wrap-around CNTFET SRAM cell for utilization in reliable IoT-based platforms;AEU - International Journal of Electronics and Communications;2023-05

5. A robust multi-bit soft-error immune SRAM cell for low-power applications;Analog Integrated Circuits and Signal Processing;2023-01-21
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