Circuit and application aspects of tunnelling devices in a MOBILE configuration

Author:

Glösekötter P.,Pacha C.,Goser K. F.,Prost W.,Kim S. O.,van Husen H.,Reimann T.,Tegude F. J.

Funder

DFG

European Union, IST cluster

NID group LOCOM

ANSWERS

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Reference30 articles.

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2. Resonant tunnelling in semiconductor double barriers;Chang;Applied Physics Letters,1974

3. Diameter dependence of current-voltage characteristics of ultrasmall area AlSb-InAs resonant tunnelling diodes with diameters down to 20 nm;Nomoto;Applied Physics Letters,1997

4. New self-aligned planar resonant-tunnelling diodes for monolithic circuits;Chen;IEEE Electron Device Letters,1997

5. Manufacturability and robust circuit design of nanoelectronic logic circuits based on resonant tunnelling diodes;Prost;Journal on Circuit Theory and Applications: Special Issue on Nanoelectronic Circuits (Invited paper),2000

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2. Generalization of the jump postulate and Brayton-Moser's mixed potential for the analysis of RTD circuits;International Journal of Circuit Theory and Applications;2015-03-04

3. A Metric for Weight Assignment to Optimize the Performance of MOBILE Threshold Logic Gate;2011 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems;2011-10

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5. On circuit models for quantum-classical networks;International Journal of Circuit Theory and Applications;2007

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